THZ amplification based on impurity-band transitions In Si/GeSi heterostructures
2008 (English)In: Proceedings of CAOL 2008, 2008, 422-424 p.Conference paper (Refereed)
Terahertz stimulated emission based on impurity-band optical transitions of phosphor donor centers embedded in Si/GeSi heterostructures is reported. THz emission was measured from selectively doped Si/GeSi structures excited by CO2 laser radiation. Amplification of 8-9 THz emission with the coefficient of 2-3 cm-1 is obtained for structures with gently strained selectively doped Si layers (Nd ≈ 1017 cm -3) under pump density of 200 kW/cm2. Corresponding net gain taking into account small overlapping of active layer with THz mode is estimated to be ∼ 200-300 cm-1. Experimental data demonstrate the possibility to use impurity-band transitions for THz laser action. The capability of Si/GeSi quantum cascade scheme which can support inverted population on donor-continuum transitions of Si conduction band is also analyzed.
Place, publisher, year, edition, pages
2008. 422-424 p.
, Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers
Amplification, Si/SiGe heterostructures, THz radiation, Carbon dioxide, Carbon monoxide, Crystals, Electric conductivity, Electron mobility, Heterojunctions, Lasers, Active layers, Band transitions, Continuum transitions, Donor centers, Doped si, Experimental datums, Net gains, Quantum cascades, Terahertz, THz emissions, Thz lasers
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-154145DOI: 10.1109/CAOL.2008.4671971ScopusID: 2-s2.0-57849167209ISBN: 9781424419746OAI: oai:DiVA.org:kth-154145DiVA: diva2:756461
4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008, 29 September 2008 through 4 October 2008, Alushta, Crimea
QC 201410172014-10-172014-10-142014-10-17Bibliographically approved