Growth, electrical and optical properties of SnO2: F on ZnO, Si and porous Si structures
2009 (English)In: Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, 2009, 352-355 p.Conference paper (Refereed)
In this work we have analyzed the optical absorption of the ZnO and SnO2:F (FTO) films and applied them in porous silicon light-emitting diodes. The absorption and energy gap were calculated by employing the projector augmented wave method  within the local density approximation and with a modeled on-site self-interaction-like correction potential within the LDA+U SIC . Experiment and theory show a good agreement when the optical absorption and optical energy gap are considered. A layer of FTO is deposited by spray pyrolysis on top of porous Si (PSi) or ZnO/(PSi) in order to make the LEDs. The morphology and roughness of the films are analyzed by Atomic Force Microscopy before and after the FTO deposition. The electrical and optical properties are studied by characteristics curves J × V, and electroluminescence intensity versus bias.
Place, publisher, year, edition, pages
2009. 352-355 p.
Absorption, Atomic force microscopy, Electric properties, Energy gap, Light, Light absorption, Light emission, Light emitting diodes, MEMS, Microelectromechanical devices, Nanotechnology, Porous silicon, Semiconducting silicon compounds, Semiconducting zinc compounds, Solids, Spray pyrolysis, Zinc oxide
IdentifiersURN: urn:nbn:se:kth:diva-153518ScopusID: 2-s2.0-70450203719ISBN: 978-143981782-7OAI: oai:DiVA.org:kth-153518DiVA: diva2:758107
Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, 3 May 2009 through 7 May 2009, Houston, TX, United States
QC 201410242014-10-242014-10-062014-10-24Bibliographically approved