Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Variability in SOI Schottky barrier MOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
Show others and affiliations
2008 (English)In: ULIS - Int. Conf. ULtim. Integr. Silicon, 2008, 27-30 p.Conference paper, Published paper (Refereed)
Abstract [en]

We study the variability of the electrical characteristics of silicon-on-insulator (SOI) SB-MOSFETs. A new method by extracting the variation of the threshold voltage from a large number of devices with different SOI thicknesses enables determining the main sources of variability and distinguishing between them. It is found that the device-to-device variability is mainly due to the inherent variation of the Schottky barrier (SB) height. An additional but smaller contribution stems from fluctuations of the SOI body thickness itself. However, scaling the SOI thickness down our measurements suggest that the SB inhomogeneity increases with decreasing tsi. Furthermore, employing dopant segregation during silicidation to realize low SB heights leads to an increase of the variability, too. Using the measured spread of ΦB we discuss on the base of simulations the influence of this variation on the on-current of SB-MOSFETs. The improved electrostatic gate control in multi-gate devices reduces the sensitivity of carrier injection on an inhomogeneous ΦB and thus suppresses the variability.

Place, publisher, year, edition, pages
2008. 27-30 p.
Series
ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
Keyword [en]
MOSFET devices, Schottky barrier diodes, Silicon, Body thickness, Electrical characteristics, In-homogeneity, International conferences, MOSFETs, Schottky barrier, Silicon-on -insulator, SOI thickness, Sources of variability, Nonmetals
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-154443DOI: 10.1109/ULIS.2008.4527134ISI: 000256023400007Scopus ID: 2-s2.0-49049100500ISBN: 9781424417308 (print)OAI: oai:DiVA.org:kth-154443DiVA: diva2:758561
Conference
9th International Conference on ULtimate Integration of Silicon, ULIS 2008, Udine, ITALY, 13-14 March 2008
Note

QC 20141027

Available from: 2014-10-27 Created: 2014-10-20 Last updated: 2016-12-19Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Zhang, Shi-Li
By organisation
Integrated Devices and Circuits
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 12 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf