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Terahertz emission from phosphor centers in SiGe and SiGe/Si semiconductors
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2008 (English)Conference paper (Refereed)
Abstract [en]

Terahertz-range photoluminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5%, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of ∼ 2.3-3.2 cm-1 has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm2.

Place, publisher, year, edition, pages
2008. 613-618 p.
, Solid State Phenomena, ISSN 10120394
Keyword [en]
Silicon-germanium, Terahertz emission, Pump intensities, Silicon laser operation, Laser optics, Optical pumping, Optical transitions, Phosphors, Photoexcitation, Superlattices, Semiconducting silicon compounds
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-154880ISI: 000252201200100ScopusID: 2-s2.0-38549104103OAI: diva2:759206
12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007, 14-19 October 2007, Erice, Italy

QC 20141029

Available from: 2014-10-29 Created: 2014-10-28 Last updated: 2014-10-29Bibliographically approved

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Radamson, Henry H.
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Integrated Devices and Circuits
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