Wafer-Scale Self-Organized InP Nanopillars with Controlled Orientation for Photovoltaic Devices
2015 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 26, no 41, 415304Article in journal (Refereed) Published
A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2015. Vol. 26, no 41, 415304
IdentifiersURN: urn:nbn:se:kth:diva-155199DOI: 10.1088/0957-4484/26/41/415304ISI: 000363433700008PubMedID: 26403979ScopusID: 2-s2.0-84947475230OAI: oai:DiVA.org:kth-155199DiVA: diva2:760117
FunderEU, FP7, Seventh Framework Programme, 248855Swedish Research Council, 349-2007-8664Swedish Research Council, 621-2014-5078
Updated from manuscript to article in journal.
QC 201602032014-11-032014-11-032016-02-17Bibliographically approved