Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Novel mechanism for order-of-magnitude enhancement of rashba effect in wide modulation-doped quantum wells
KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101). University of Belgrade, Serbia.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
2007 (English)In: Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006, American Institute of Physics (AIP), 2007, 1371-1372 p.Conference paper, Published paper (Refereed)
Abstract [en]

The Rashba effect leading to subband splitting in quantum wells is frequently taken to be proportional to some average electric field. We here show that taking the spatial variation of the electric field into account gives important effects. In particular we demonstrate that one can apply a moderate electric field to a wide modulation-doped quantum well and get an order-of-magnitude enhancement of the Rashba splitting characteristic of the built-in interface field. For small asymmetry the wave function localization and spin projection of a subband can be rapid functions of the in-plane wave vector.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2007. 1371-1372 p.
Series
AIP Conference Proceedings, ISSN 0094-243X ; 893
Keyword [en]
Modulation doping, Rashba effect, Spintronics
National Category
Electrical Engineering, Electronic Engineering, Information Engineering Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-154919DOI: 10.1063/1.2730414ISI: 000246281800674Scopus ID: 2-s2.0-77958504503ISBN: 978-073540397-0 (print)OAI: oai:DiVA.org:kth-154919DiVA: diva2:760184
Conference
28th International Conference on the Physics of Semiconductors, ICPS 2006, 24 July 2006 through 28 July 2006, Vienna, Austria
Note

QC 20141103

Available from: 2014-11-03 Created: 2014-10-29 Last updated: 2014-11-03Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Gvozdić, Dejan M.Ekenberg, Ulf
By organisation
Optics and Photonics (Closed 20120101)
Electrical Engineering, Electronic Engineering, Information EngineeringPhysical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 12 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf