Novel mechanism for order-of-magnitude enhancement of rashba effect in wide modulation-doped quantum wells
2007 (English)In: Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006, American Institute of Physics (AIP), 2007, 1371-1372 p.Conference paper (Refereed)
The Rashba effect leading to subband splitting in quantum wells is frequently taken to be proportional to some average electric field. We here show that taking the spatial variation of the electric field into account gives important effects. In particular we demonstrate that one can apply a moderate electric field to a wide modulation-doped quantum well and get an order-of-magnitude enhancement of the Rashba splitting characteristic of the built-in interface field. For small asymmetry the wave function localization and spin projection of a subband can be rapid functions of the in-plane wave vector.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2007. 1371-1372 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 893
Modulation doping, Rashba effect, Spintronics
Electrical Engineering, Electronic Engineering, Information Engineering Physical Sciences
IdentifiersURN: urn:nbn:se:kth:diva-154919DOI: 10.1063/1.2730414ISI: 000246281800674ScopusID: 2-s2.0-77958504503ISBN: 978-073540397-0OAI: oai:DiVA.org:kth-154919DiVA: diva2:760184
28th International Conference on the Physics of Semiconductors, ICPS 2006, 24 July 2006 through 28 July 2006, Vienna, Austria
QC 201411032014-11-032014-10-292014-11-03Bibliographically approved