Sodium diffusion in 4H-SiC
2014 (English)In: APL MATERIALS, ISSN 2166-532X, Vol. 2, no 9, 096106- p.Article in journal (Refereed) Published
Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 degrees C to 1800 degrees C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 degrees C in p-type 4H-SiC. On the other hand for sodium atoms trapped at suitable sites the mobility is limited up to 1800 degrees C. Trap limited diffusion kinetics is suggested and an effective diffusivity has been extracted with an activation energy of 4 eV for sodium diffusion in p-type 4H-SiC.
Place, publisher, year, edition, pages
2014. Vol. 2, no 9, 096106- p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-154763DOI: 10.1063/1.4895040ISI: 000342568000028OAI: oai:DiVA.org:kth-154763DiVA: diva2:760728
QC 201411042014-11-042014-10-272014-11-04Bibliographically approved