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Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. (FMI Laboratory of Photonics and Microwave Engineering)ORCID iD: 0000-0001-5967-2651
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2014 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 25, no 40, 405705- p.Article in journal (Refereed) Published
Abstract [en]

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.

Place, publisher, year, edition, pages
2014. Vol. 25, no 40, 405705- p.
Keyword [en]
germanium, nanocrystals, self-assembly, optical properties
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-155143DOI: 10.1088/0957-4484/25/40/405705ISI: 000342503800011ScopusID: 2-s2.0-84907186612OAI: diva2:761033

QC 20141105

Available from: 2014-11-05 Created: 2014-10-31 Last updated: 2014-11-05Bibliographically approved

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Wosinski, Lech
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