Strained silicon technology
2007 (English)In: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, 104-107 p.Conference paper (Refereed)
Following a brief review of strained silicon technology options, this paper presents results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. The work demonstrates that by using high quality thin virtual substrates the compromised performance enhancements commonly observed in short gate length MOSFETs and high bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated.
Place, publisher, year, edition, pages
2007. 104-107 p.
, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Control equipment, Electric properties, Heating, MOSFET devices
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-155609DOI: 10.1109/ICSICT.2006.306089ScopusID: 2-s2.0-34547272504ISBN: 1424401615ISBN: 978-142440161-1OAI: oai:DiVA.org:kth-155609DiVA: diva2:762019
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, 23 October 2006 through 26 October 2006, Shanghai, China
QC 201411102014-11-102014-11-072014-11-10Bibliographically approved