Critical technology issues for deca-nanometer MOSFETs
2007 (English)In: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, 27-30 p.Conference paper (Refereed)
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-K gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed.
Place, publisher, year, edition, pages
2007. 27-30 p.
Electrodes, Electron mobility, Gate dielectrics, Integration
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-155608DOI: 10.1109/ICSICT.2006.306047ScopusID: 2-s2.0-34547325869ISBN: 1424401615ISBN: 978-142440161-1OAI: oai:DiVA.org:kth-155608DiVA: diva2:762250
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, 23 October 2006 through 26 October 2006, Shanghai, China
QC 201411112014-11-112014-11-072014-11-11Bibliographically approved