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Critical technology issues for deca-nanometer MOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2007 (English)In: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, 27-30 p.Conference paper, Published paper (Refereed)
Abstract [en]

An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-K gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed.

Place, publisher, year, edition, pages
2007. 27-30 p.
Keyword [en]
Electrodes, Electron mobility, Gate dielectrics, Integration
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-155608DOI: 10.1109/ICSICT.2006.306047Scopus ID: 2-s2.0-34547325869ISBN: 1424401615 (print)ISBN: 978-142440161-1 OAI: oai:DiVA.org:kth-155608DiVA: diva2:762250
Conference
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, 23 October 2006 through 26 October 2006, Shanghai, China
Note

QC 20141111

Available from: 2014-11-11 Created: 2014-11-07 Last updated: 2014-11-11Bibliographically approved

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Malm, B. GunnarHellström, Per-Erik

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Östling, MikaelMalm, B. GunnarVon Haartman, MartinHållstedt, JuliusHellström, Per-ErikZhang, Shili
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