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Static Nonlinearity in Graphene Field Effect Transistors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-4637-8001
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-1234-6060
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2014 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 61, no 8, 3001-3003 p.Article in journal (Refereed) Published
Abstract [en]

The static linearity performance metrics of the graphene-based field effect transistor (GFET) transconductor are studied and modeled. Closed expressions are proposed for second-and third-order harmonic distortion (HD2, HD3), second-and third-order intermodulation distortion (Delta IM2, Delta IM3), and second-and third-order intercept points (A(IIP2), A(IIP3)). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design to predict the GFET biasing conditions at which linearity requirements are met.

Place, publisher, year, edition, pages
2014. Vol. 61, no 8, 3001-3003 p.
Keyword [en]
Graphene-based field effect transistor (GFET), nonlinearity, RF circuit
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-155492DOI: 10.1109/TED.2014.2326887ISI: 000342906200057Scopus ID: 2-s2.0-84904966355OAI: oai:DiVA.org:kth-155492DiVA: diva2:762367
Note

QC 20141111

Available from: 2014-11-11 Created: 2014-11-06 Last updated: 2017-12-05Bibliographically approved

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Vaziri, Sam

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