Static Nonlinearity in Graphene Field Effect Transistors
2014 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 61, no 8, 3001-3003 p.Article in journal (Refereed) Published
The static linearity performance metrics of the graphene-based field effect transistor (GFET) transconductor are studied and modeled. Closed expressions are proposed for second-and third-order harmonic distortion (HD2, HD3), second-and third-order intermodulation distortion (Delta IM2, Delta IM3), and second-and third-order intercept points (A(IIP2), A(IIP3)). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design to predict the GFET biasing conditions at which linearity requirements are met.
Place, publisher, year, edition, pages
2014. Vol. 61, no 8, 3001-3003 p.
Graphene-based field effect transistor (GFET), nonlinearity, RF circuit
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-155492DOI: 10.1109/TED.2014.2326887ISI: 000342906200057ScopusID: 2-s2.0-84904966355OAI: oai:DiVA.org:kth-155492DiVA: diva2:762367
QC 201411112014-11-112014-11-062014-11-11Bibliographically approved