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Rare-Earth-Ion-Doped Channel Waveguide Lasers on Silicon
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
2015 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 21, no 1, p. 1602512-Article in journal (Refereed) Published
Abstract [en]

This paper reviews the recent developments in rare-earth-ion-doped channel waveguide lasers. Optical gain in rare-earth-ion-doped waveguides has been increased by two orders of magnitude to similar to 1000 dB/cm and waveguide lasers with extremely high slope efficiencies and output powers exceeding the Watt level have been demonstrated. Of particular interest in integrated optics is the recent integration of rare-earth-ion-doped channel waveguide lasers in amorphous materials directly deposited on a silicon substrate. Remarkable performance with respect to slope efficiency, output power, and laser linewidth has been achieved.

Place, publisher, year, edition, pages
2015. Vol. 21, no 1, p. 1602512-
Keywords [en]
Amorphous materials, CW lasers, dielectric waveguides, distributed Bragg reflector lasers, distributed feedback lasers, integrated optics, optical amplifiers, planar waveguides, rare earth compounds, solid lasers
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-154732DOI: 10.1109/JSTQE.2014.2351811ISI: 000342385500001Scopus ID: 2-s2.0-84907202616OAI: oai:DiVA.org:kth-154732DiVA, id: diva2:763145
Note

QC 20141113

Available from: 2014-11-13 Created: 2014-10-27 Last updated: 2017-12-05Bibliographically approved

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