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Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver
KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
2007 (English)In: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, E-ISSN 1520-8540, Vol. 24, no 11, 2853-2859 p.Article in journal (Refereed) Published
Abstract [en]

The characteristics of silicon-on-insulator (SOI) ridge waveguides are analyzed by using a cylindrical full-vectorial finite-difference method mode solver with a perfectly-matched layer treatment. First, the single-mode condition for an SOI ridge nanowire with different Si core thicknesses is obtained. The obtained single-mode condition is different from that for the conventional micrometrical SOI ridge waveguides with a large cross section. By adjusting the cross section (the core width and the etching depth), one can have a nonbirefringent SOI ridge nanowire. The analysis on the bending loss of S01 ridge nanowires shows that one can have a relatively small bending radius even with a shallow etching (i.e., a small ratio γ between the etching depth and the total thickness). For example, even when one chooses a small ratio γ= 0.4, one still has a low bending loss with a small bending radius of 15 μm for an SOI nanowire with a thin core h∞= 250 nm, which is very different from a conventional large SOI ridge waveguide.

Place, publisher, year, edition, pages
2007. Vol. 24, no 11, 2853-2859 p.
Keyword [en]
Bending radius, Silicon-on-insulator (SOI) ridge waveguides, Single-mode condition
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-155309DOI: 10.1364/JOSAB.24.002853ISI: 000251335600013Scopus ID: 2-s2.0-37549021101OAI: oai:DiVA.org:kth-155309DiVA: diva2:764044
Note

QC 20141118

Available from: 2014-11-18 Created: 2014-11-04 Last updated: 2017-12-05Bibliographically approved

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