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A novel diode structure with controlled injection of backside holes (CIBH)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2006 (English)Conference paper, Published paper (Refereed)
Abstract [en]

In this paper we present a novel 3.3kV diode structure with controlled injection of backside holes, i.e. CIBH diode. This new diode structure features buried floating p layers at the cathode side. These p doped areas prevent the formation of high electric field strength at the nn+ junction and accordingly avoid the avalanche generation at the nn+ junction. The CIBH diode concept provides, compared to diodes without p layers and the same design, significantly improved dynamic ruggedness and improved sott reverse recovery at low current densities. Simulations and results of the first fabricated diodes show the readability of this new promising diode concept.

Place, publisher, year, edition, pages
2006. 9-12 p.
Series
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854 ; 2006
Keyword [en]
Backside holes (CIBH), CIBH diode, Dynamic ruggedness, Cathodes, Computer simulation, Current density, Electric current control, Electric field effects, Hole concentration, Semiconductor junctions, Semiconductor diodes
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-155418ISI: 000238922500006Scopus ID: 2-s2.0-34247511680ISBN: 0780397142 (print)ISBN: 9780780397149 (print)OAI: oai:DiVA.org:kth-155418DiVA: diva2:764392
Conference
18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06; Naples; Italy; 4 June 2006 through 8 June 2006
Note

QC 20141119

Available from: 2014-11-19 Created: 2014-11-05 Last updated: 2014-11-19Bibliographically approved

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  • apa
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  • de-DE
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  • nn-NO
  • nn-NB
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Output format
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