A novel diode structure with controlled injection of backside holes (CIBH)
2006 (English)Conference paper (Refereed)
In this paper we present a novel 3.3kV diode structure with controlled injection of backside holes, i.e. CIBH diode. This new diode structure features buried floating p layers at the cathode side. These p doped areas prevent the formation of high electric field strength at the nn+ junction and accordingly avoid the avalanche generation at the nn+ junction. The CIBH diode concept provides, compared to diodes without p layers and the same design, significantly improved dynamic ruggedness and improved sott reverse recovery at low current densities. Simulations and results of the first fabricated diodes show the readability of this new promising diode concept.
Place, publisher, year, edition, pages
2006. 9-12 p.
, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854 ; 2006
Backside holes (CIBH), CIBH diode, Dynamic ruggedness, Cathodes, Computer simulation, Current density, Electric current control, Electric field effects, Hole concentration, Semiconductor junctions, Semiconductor diodes
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-155418ISI: 000238922500006ScopusID: 2-s2.0-34247511680ISBN: 0780397142ISBN: 9780780397149OAI: oai:DiVA.org:kth-155418DiVA: diva2:764392
18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06; Naples; Italy; 4 June 2006 through 8 June 2006
QC 201411192014-11-192014-11-052014-11-19Bibliographically approved