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Strain-free low-defect-density bulk GaN with nonpolar orientations
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2006 (English)Conference paper (Refereed)
Abstract [en]

Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the [0001] direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their twoelectron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.

Place, publisher, year, edition, pages
2006. 19-21 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 955
Keyword [en]
Nonpolar orientations, Strain free material, Strain-free positions, Excitons, Phonons, Photoluminescence, Raman scattering, Gallium nitride
National Category
Other Materials Engineering
URN: urn:nbn:se:kth:diva-155413ScopusID: 2-s2.0-40949164381ISBN: 9781604234114OAI: diva2:764585
2006 MRS Fall Meeting; Boston, MA; United States; 27 November 2006 through 1 December 2006

QC 20141119

Available from: 2014-11-19 Created: 2014-11-05 Last updated: 2014-11-19Bibliographically approved

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Lourdudoss, Sebastian
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Microelectronics and Information Technology, IMIT
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