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Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs
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2006 (English)In: Proc SPIE Int Soc Opt Eng, 2006Conference paper (Refereed)
Abstract [en]

In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.

Place, publisher, year, edition, pages
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 6185
Keyword [en]
Long-wavelength vertical-cavity surface-emitting lasers, Optical interconnections, Strained InGaAs quantum well, Continuous wave lasers, Metallorganic vapor phase epitaxy, Near field scanning optical microscopy, Semiconducting indium gallium arsenide, Thermodynamic properties, Scanning optical microscopy, Vertical Cavity Surface Emitting Lasers (VCSEL), Semiconductor quantum wells
National Category
Atom and Molecular Physics and Optics
URN: urn:nbn:se:kth:diva-156319DOI: 10.1117/12.662118ISI: 000239001400032ScopusID: 2-s2.0-33746679899ISBN: 0819462411ISBN: 9780819462411OAI: diva2:766881
Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 3-5 April 2006, Strasbourg, France

QC 20141128

Available from: 2014-11-28 Created: 2014-11-26 Last updated: 2014-11-28Bibliographically approved

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Hammar, MattiasBerggren, JesperSundgren, Petrus
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Microelectronics and Information Technology, IMIT
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ReferencesLink to record
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