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Growth and characterization of boron-doped Si1-x-yGe xCy layers grown by reduced pressure chemical vapor deposition
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2005 (English)In: Defects and Diffusion in Semiconductors - an Annual Retrospective VIII, Trans Tech Publications Inc., 2005, 39-49 p.Chapter in book (Refereed)
Abstract [en]

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2005. 39-49 p.
Keyword [en]
Boron Doping, Chemical Vapor Deposition (CVD), Epitaxy, SiGeC Alloys, Boron, Chemical vapor deposition, Electric properties, Epitaxial growth, Silicon alloys
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-156551DOI: 10.4028/www.scientific.net/DDF.245-246.39Scopus ID: 2-s2.0-30644471766ISBN: 978-3-908451-16-7 (print)OAI: oai:DiVA.org:kth-156551DiVA: diva2:767613
Note

QC 20141202

Available from: 2014-12-02 Created: 2014-12-01 Last updated: 2014-12-02Bibliographically approved

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Radamson, Henry H.Hållstedt, Julius
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