Novel integration concepts for sige-based rf-MOSFETs
2005 (English)In: Proc. Electrochem. Soc., 2005, 270-284 p.Conference paper (Refereed)
An overview of critical integration issues for future generation rf-MOSFETs is presented. The process requirements and implementation of selective epitaxy for the source and drain regions is given. In-situ doping of highly boron doped recessed SiGe S/D is demonstrated. Channel region engineering is discussed and 50 nm strained SiGe pMOSFETs are demonstrated. Implementation of high-κ gate dielectrics is presented and device performance is demonstrated for surface channel MOSFETs with a gate stack based on ALD-formed HfO2/Al 2O3. Low frequency noise properties for those devices are analyzed. Contact metallization issues are critical for ultra scaled devices and here the implementation of NiSi on SiGe(C) regions as well as on ultra thin body SOI MOSFETs are presented. Finally, a spacer pattering technology using optical lithography to fabricate sub-50 nm high-frequency MOSFETs is demonstrated.
Place, publisher, year, edition, pages
2005. 270-284 p.
, Proceedings - Electrochemical Society, PV 2005-06
Doping (additives), Epitaxial growth, Metallizing, Process engineering, Semiconducting germanium compounds, Semiconducting silicon compounds, Process integration, Selective epitaxy, Spacer patterning technology, MOSFET devices
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-156506ScopusID: 2-s2.0-31744437040OAI: oai:DiVA.org:kth-156506DiVA: diva2:767734
207th ECS Meeting, 16-20 May 2005, Quebec, Canada
QC 201412022014-12-022014-11-282014-12-02Bibliographically approved