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Novel integration concepts for sige-based rf-MOSFETs
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2005 (English)In: Proc. Electrochem. Soc., 2005, 270-284 p.Conference paper, Published paper (Refereed)
Abstract [en]

An overview of critical integration issues for future generation rf-MOSFETs is presented. The process requirements and implementation of selective epitaxy for the source and drain regions is given. In-situ doping of highly boron doped recessed SiGe S/D is demonstrated. Channel region engineering is discussed and 50 nm strained SiGe pMOSFETs are demonstrated. Implementation of high-κ gate dielectrics is presented and device performance is demonstrated for surface channel MOSFETs with a gate stack based on ALD-formed HfO2/Al 2O3. Low frequency noise properties for those devices are analyzed. Contact metallization issues are critical for ultra scaled devices and here the implementation of NiSi on SiGe(C) regions as well as on ultra thin body SOI MOSFETs are presented. Finally, a spacer pattering technology using optical lithography to fabricate sub-50 nm high-frequency MOSFETs is demonstrated.

Place, publisher, year, edition, pages
2005. 270-284 p.
Series
Proceedings - Electrochemical Society, PV 2005-06
Keyword [en]
Doping (additives), Epitaxial growth, Metallizing, Process engineering, Semiconducting germanium compounds, Semiconducting silicon compounds, Process integration, Selective epitaxy, Spacer patterning technology, MOSFET devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-156506Scopus ID: 2-s2.0-31744437040OAI: oai:DiVA.org:kth-156506DiVA: diva2:767734
Conference
207th ECS Meeting, 16-20 May 2005, Quebec, Canada
Note

QC 20141202

Available from: 2014-12-02 Created: 2014-11-28 Last updated: 2014-12-02Bibliographically approved

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Malm, Bengt GunnarHellström, Per-Erik

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