1.3 μm Buried Tunnel junction InGaAs/GaAs VCSELs
2013 (English)Conference paper (Other academic)
Vertical cavity surface emitting lasers (VCSELs) working at 1.3μm are potential cost- and power-efficient sources for medium-range optical networks. However, they are still waiting for their commercial breakthrough due to several technological challenges related to the need for complex materials systems and/or fabrication methods. Nevertheless, many efforts have been devoted to solve the problem, also yielding some excellent results. Alter-native approaches we have previously presented are In-GaAs/GaAs 1.3-μm VCSELs based on oxidation con-finement or with an epitaxial regrowth of a pnp block-ing structure. Here we demonstrate a buried-tunnel junction (BTJ) current confinement scheme to improve the static and dynamic performance.
Place, publisher, year, edition, pages
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-156836OAI: oai:DiVA.org:kth-156836DiVA: diva2:768026
37th Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe, Rostock, Germany
QC 201412032014-12-022014-12-022014-12-03Bibliographically approved