Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Light-emitting nano-porous silicon structures fabricated using a plasma hydrogenation technique
Show others and affiliations
2005 (English)In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ISSN 0921-5107, Vol. 124-125, no SUPPL., p. 483-487Article in journal (Refereed) Published
Abstract [en]

The preparation of porous silicon films by DC-plasma hydrogenation and subsequent annealing of amorphous silicon films on silicon and glass substrates is reported for the first time. The effects of varying plasma power and annealing temperatures have been investigated and characterized by scanning-electron microscopy, transmission-electron microscopy, and photoluminescence. A plasma density of about 5.5 W/m2 and hydrogenation-annealing temperatures of about 400 °C was found to be suitable for the formation of nano-crystalline silicon films with grain diameters of the order of 3-10 nm. The intensity and wavelength of the emitted visible light were found to depend on the hydrogenation and annealing conditions, and patterning of the silicon films using standard lithography allowed the creation of light-emitting patterns.

Place, publisher, year, edition, pages
2005. Vol. 124-125, no SUPPL., p. 483-487
Keywords [en]
Hydrogenation, Nano-pores, Photoluminescence, Porous silicon, Amorphous silicon, Annealing, Glass, Light emitting diodes, Metallic films, Photolithography, Plasma applications, Scanning electron microscopy, Transmission electron microscopy, Plasma hydrogenation technique, Plasma power, Silicon films
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-156478DOI: 10.1016/j.mseb.2005.08.090ISI: 000233895800101Scopus ID: 2-s2.0-27844439353OAI: oai:DiVA.org:kth-156478DiVA, id: diva2:768509
Note

QC 20141204

Available from: 2014-12-04 Created: 2014-11-28 Last updated: 2015-10-16Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Radamson, Henry H.
By organisation
Microelectronics and Information Technology, IMIT
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 205 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf