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Single crystal diamond for infrared sensing applications
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. University of Tehran, Iran.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 16, 163510- p.Article in journal (Refereed) Published
Abstract [en]

The synthesis of new materials for thermal infrared (IR) detection has been an intensive research area in recent years. Among new semiconductor materials, synthetic diamond has the ability to function even under very high temperature and high radiation conditions. In the present work, diamond Schottky diodes with boron concentrations in the range of 10(14) < B < 10(17) cm(-3) are presented as candidates for IR thermal sensors with an excellent temperature coefficient of resistance (-8.42%/K) and very low noise levels around 6.6 x 10(-15) V-2/Hz. This enables huge performance enhancements for a wide variety of systems, e.g., automotive and space applications.

Place, publisher, year, edition, pages
2014. Vol. 105, no 16, 163510- p.
Keyword [en]
Infrared sensing, Single crystal diamond
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Identifiers
URN: urn:nbn:se:kth:diva-156999DOI: 10.1063/1.4899278ISI: 000344363000092Scopus ID: 2-s2.0-84908261243OAI: oai:DiVA.org:kth-156999DiVA: diva2:768976
Funder
Swedish Research Council
Note

QC 20141205

Available from: 2014-12-05 Created: 2014-12-04 Last updated: 2017-12-05Bibliographically approved

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Kolahdouz, MohammadrezaMoeen, MahdiRadamson, Henry H.
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