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Erbium-doped spiral amplifiers with 20 dB of net gain on silicon
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2014 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 22, no 21, 25993-26004 p.Article in journal (Refereed) Published
Abstract [en]

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 x 10(20) cm(-3) and 0.95 x 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

Place, publisher, year, edition, pages
2014. Vol. 22, no 21, 25993-26004 p.
Keyword [en]
Wave-Guide Amplifiers, Optical Gain, Up-Conversion, Mu M, Al2o3er3+, Fibers, Fabrication, Laser
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URN: urn:nbn:se:kth:diva-157002DOI: 10.1364/OE.22.025993ISI: 000344004600137PubMedID: 25401633Scopus ID: 2-s2.0-84908179072OAI: oai:DiVA.org:kth-157002DiVA: diva2:769043
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QC 20141205

Available from: 2014-12-05 Created: 2014-12-04 Last updated: 2017-12-05Bibliographically approved

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