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Bias-temperature instability in single-layer graphene field-effect transistors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-4637-8001
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 14, 143507- p.Article in journal (Refereed) Published
Abstract [en]

We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors. Both negative BTI and positive BTI can be benchmarked using models developed for Si technologies. In particular, recovery follows the universal relaxation trend and can be described using the established capture/emission time map approach. We thereby propose a general methodology for assessing the reliability of graphene/dielectric interfaces, which are essential building blocks of graphene devices. (C) 2014 AIP Publishing LLC.

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2014. Vol. 105, no 14, 143507- p.
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URN: urn:nbn:se:kth:diva-156991DOI: 10.1063/1.4897344ISI: 000344343900068Scopus ID: 2-s2.0-84907887083OAI: oai:DiVA.org:kth-156991DiVA: diva2:769068
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QC 20141205

Available from: 2014-12-05 Created: 2014-12-04 Last updated: 2017-12-05Bibliographically approved

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Smith, Anderson D.Östling, Mikael
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