Bias-temperature instability in single-layer graphene field-effect transistors
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 14, 143507- p.Article in journal (Refereed) Published
We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors. Both negative BTI and positive BTI can be benchmarked using models developed for Si technologies. In particular, recovery follows the universal relaxation trend and can be described using the established capture/emission time map approach. We thereby propose a general methodology for assessing the reliability of graphene/dielectric interfaces, which are essential building blocks of graphene devices. (C) 2014 AIP Publishing LLC.
Place, publisher, year, edition, pages
2014. Vol. 105, no 14, 143507- p.
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-156991DOI: 10.1063/1.4897344ISI: 000344343900068ScopusID: 2-s2.0-84907887083OAI: oai:DiVA.org:kth-156991DiVA: diva2:769068
QC 201412052014-12-052014-12-042014-12-05Bibliographically approved