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Nominal PbSe nano-islands on PbTe: Grown by MBE, analyzed by AFM and TEM
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering. Portland State University (PSU), United States.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering. Portland State University (PSU), United States.
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2005 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Nominal PbSe nano-islands were grown in the Stranski-Krustanow mode on (111) oriented PbTe/BaF 2 pseudo-substrates by molecular beam epitaxy (MBE). The number density and morphology of these islands were assessed by means of atomic force microscopy (AFM). Transmission electron microscopy (TEM) was employed to determine the strain state and cryslallographic structure of these islands. On the basis of both AFM and TEM analyses, we distinguish between different groups of tensibly strained islands. The suggestion is made to use such nano-islands as part of nanometrology standards for scanning probe microscopy.

Place, publisher, year, edition, pages
2005. 383-388 p.
Series
Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 829
Keyword [en]
Atomic ordering, Nanometrology, Scanning probe microscopy, Strain state, Atomic force microscopy, Crystal orientation, Crystal structure, Crystallography, Lead compounds, Molecular beam epitaxy, Morphology, Semiconductor quantum dots, Strain, Transmission electron microscopy, Wetting, Nanostructured materials
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-156783Scopus ID: 2-s2.0-20344397924OAI: oai:DiVA.org:kth-156783DiVA: diva2:769134
Conference
Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications, 29 November 2004 through 3 December 2004, Boston, MA, United States
Note

QC 20141205

Available from: 2014-12-05 Created: 2014-12-02 Last updated: 2014-12-05Bibliographically approved

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