Nominal PbSe nano-islands on PbTe: Grown by MBE, analyzed by AFM and TEM
2005 (English)Conference paper (Refereed)
Nominal PbSe nano-islands were grown in the Stranski-Krustanow mode on (111) oriented PbTe/BaF 2 pseudo-substrates by molecular beam epitaxy (MBE). The number density and morphology of these islands were assessed by means of atomic force microscopy (AFM). Transmission electron microscopy (TEM) was employed to determine the strain state and cryslallographic structure of these islands. On the basis of both AFM and TEM analyses, we distinguish between different groups of tensibly strained islands. The suggestion is made to use such nano-islands as part of nanometrology standards for scanning probe microscopy.
Place, publisher, year, edition, pages
2005. 383-388 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 829
Atomic ordering, Nanometrology, Scanning probe microscopy, Strain state, Atomic force microscopy, Crystal orientation, Crystal structure, Crystallography, Lead compounds, Molecular beam epitaxy, Morphology, Semiconductor quantum dots, Strain, Transmission electron microscopy, Wetting, Nanostructured materials
IdentifiersURN: urn:nbn:se:kth:diva-156783ScopusID: 2-s2.0-20344397924OAI: oai:DiVA.org:kth-156783DiVA: diva2:769134
Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications, 29 November 2004 through 3 December 2004, Boston, MA, United States
QC 201412052014-12-052014-12-022014-12-05Bibliographically approved