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Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopy
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)Conference paper, Published paper (Refereed)
Abstract [en]

In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate 5, 10, and 20 nm InGaAs/InP (lattice matched) quantum wells grown by metal-organic vapour phase epitaxy and sandwiched between Si-doped InP barriers. It is demonstrated that SCM is capable of detecting the electrons accumulated in the quantum wells and that the SCM signal shows a systematic trend for the wells of different width. It is also shown that at appropriate tip-sample DC biases depletion regions in the barriers adjacent to the wells are clearly resolved.

Place, publisher, year, edition, pages
2004. 645-648 p.
Series
Design and Nature, ISSN 1478-0585
Keyword [en]
Capacitance, Carrier concentration, Computer simulation, Doping (additives), Electric potential, Indium compounds, Signal processing, Vapor phase epitaxy, Capacitance variations, Metal-organic vapor phase epitaxy (MOVPE), Scanning capacitance microscopy (SCM), Semiconductor structures, Semiconductor quantum wells
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-156939ISI: 000222976100146Scopus ID: 2-s2.0-7744220580OAI: oai:DiVA.org:kth-156939DiVA: diva2:769137
Conference
Design and Nature II: Comparing Design in Nature with Science and Engineering, 28-30 June 2004, Rhodes, Greece
Note

QC 20141205

Available from: 2014-12-05 Created: 2014-12-04 Last updated: 2017-03-30Bibliographically approved

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Maknys, KȩstutisDouhéret, OlivierAnand, Srinivasan
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