Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopy
2004 (English)Conference paper (Refereed)
In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate 5, 10, and 20 nm InGaAs/InP (lattice matched) quantum wells grown by metal-organic vapour phase epitaxy and sandwiched between Si-doped InP barriers. It is demonstrated that SCM is capable of detecting the electrons accumulated in the quantum wells and that the SCM signal shows a systematic trend for the wells of different width. It is also shown that at appropriate tip-sample DC biases depletion regions in the barriers adjacent to the wells are clearly resolved.
Place, publisher, year, edition, pages
2004. 645-648 p.
, Design and Nature, ISSN 14780585
Capacitance, Carrier concentration, Computer simulation, Doping (additives), Electric potential, Indium compounds, Signal processing, Vapor phase epitaxy, Capacitance variations, Metal-organic vapor phase epitaxy (MOVPE), Scanning capacitance microscopy (SCM), Semiconductor structures, Semiconductor quantum wells
IdentifiersURN: urn:nbn:se:kth:diva-156939ISI: 000222976100146ScopusID: 2-s2.0-7744220580OAI: oai:DiVA.org:kth-156939DiVA: diva2:769137
Design and Nature II: Comparing Design in Nature with Science and Engineering, 28-30 June 2004, Rhodes, Greece
QC 201412052014-12-052014-12-042014-12-05Bibliographically approved