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Full Epitaxial Trench Type Buried Grid SiC JBS Diodes
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2014 (English)In: ECS Transactions, ISSN 1938-5862, E-ISSN 1938-6737, Vol. 64, no 7, 289-293 p.Article in journal (Refereed) Published
Abstract [en]

The paper presents the advanced concept of fully epitaxial SiC junction barrier Schottky (JBS) diodes. It combines trench etching with embedded epitaxial re-growth and enables cost-efficient manufacturing. Fabricated devices are rated for 20A / 1200V and have leakage currents below 0.1µA at 1000V blocking voltage.

Place, publisher, year, edition, pages
2014. Vol. 64, no 7, 289-293 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-157148DOI: 10.1149/06407.0289ecstOAI: oai:DiVA.org:kth-157148DiVA: diva2:769384
Note

QC 20141208

Available from: 2014-12-08 Created: 2014-12-08 Last updated: 2017-12-05Bibliographically approved
In thesis
1. Materials and Processing Technologies for Advanced Electronic and Photonic Devices
Open this publication in new window or tab >>Materials and Processing Technologies for Advanced Electronic and Photonic Devices
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
stockholm: KTH Royal Institute of Technology, 2014. 84 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:15
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-157138 (URN)978-91-7595-351-9 (ISBN)
Public defence
2014-12-17, Sal/Hal A, Electrum, KTH-ICT, Kista, 10:00 (English)
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Note

QC 20141208

Available from: 2014-12-08 Created: 2014-12-07 Last updated: 2014-12-08Bibliographically approved

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