Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Planarization of epitaxial SiC trench structures by plasma ion etching
Show others and affiliations
(English)Manuscript (preprint) (Other academic)
Identifiers
URN: urn:nbn:se:kth:diva-157150OAI: oai:DiVA.org:kth-157150DiVA: diva2:769390
Note

QS 2014

Available from: 2014-12-08 Created: 2014-12-08 Last updated: 2014-12-08Bibliographically approved
In thesis
1. Materials and Processing Technologies for Advanced Electronic and Photonic Devices
Open this publication in new window or tab >>Materials and Processing Technologies for Advanced Electronic and Photonic Devices
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
stockholm: KTH Royal Institute of Technology, 2014. 84 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:15
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-157138 (URN)978-91-7595-351-9 (ISBN)
Public defence
2014-12-17, Sal/Hal A, Electrum, KTH-ICT, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20141208

Available from: 2014-12-08 Created: 2014-12-07 Last updated: 2014-12-08Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Zhang, Andy Zhenzhong

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 62 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf