Full band Monte Carlo simulation-beyond the semiclassical approach
2004 (English)In: Monte Carlo Methods and Applications, ISSN 0929-9629, Vol. 10, no 3-4, 481-490 p.Article in journal (Refereed) Published
A quantum mechanical extension of the full band ensemble Monte Carlo (MC) simulation method is presented. The new approach goes beyond the traditional semi-classical method generally used in MC simulations of charge transport in semiconductor materials and devices. The extension is necessary in high-field simulations of semiconductor materials with a complex unit cell, such as the hexagonal SiC polytypes or wurtzite GaN. Instead of complex unit cells the approach can also be used for super-cells, in order to understand charge transport at surfaces, around point defects, or in quantum wells.
Place, publisher, year, edition, pages
2004. Vol. 10, no 3-4, 481-490 p.
Charge transport, Monte Carlo methods, Quantum transport, Semiconductor device simulation
Probability Theory and Statistics
IdentifiersURN: urn:nbn:se:kth:diva-156921ScopusID: 2-s2.0-84858408685OAI: oai:DiVA.org:kth-156921DiVA: diva2:769896
QC 201412092014-12-092014-12-042015-10-20Bibliographically approved