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HRXRD analysis of SiGeC layers for BiCMOS applications
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
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2004 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The use of HRXRD for the monitoring of the dopant activation anneal through the detection of carbon outdiffusion has been demonstrated. The advantages of HRXRD over other measurement techniques for in-line epi-growth monitoring are also discussed. HRXRD reciprocal space mapping was used to study the SiGe layer stability as a function of carbon concentration for vertically scaled layers designed for high performance BiCMOS applications. It was found that as the carbon concentration is increased there is a reduction of boron cluster formation, but an increase in defect density is also observed.

Place, publisher, year, edition, pages
2004. 135-142 p.
Series
Proceedings - Electrochemical Society, 7
Keyword [en]
CMOS integrated circuits, Ellipsometry, Heterojunction bipolar transistors, Optimization, Reflectometers, Secondary ion mass spectrometry, Semiconducting films, X ray diffraction analysis, Carbon outdiffusion, Dopant activation, In-line process monitoring, Spectroscopic ellipsometry, Semiconducting silicon compounds
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-157297Scopus ID: 2-s2.0-17044419670OAI: oai:DiVA.org:kth-157297DiVA: diva2:771051
Conference
SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, 3 October 2004 through 8 October 2004, Honolulu, HI, United States
Note

QC 20141212

Available from: 2014-12-12 Created: 2014-12-08 Last updated: 2014-12-12Bibliographically approved

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Malm, Gunnar

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