Contact poling of Rb:KTiOPO4 using a micro-structured silicon electrode
2015 (English)In: Optics Express, ISSN 1094-4087, Vol. 23, no 2, 636-641 p.Article in journal (Refereed) Published
A contact poling technique for domain engineering of ferroelectrics using a micro-structured silicon electrode is demonstrated on Rb:KTiOPO4. High quality QPM gratings were reproducibly fabricated. The silicon electrode is reusable and the technique potentially suitable when complex structures with sub-mu m features are to be domain engineered, which otherwise is incompatible with conventional photolithography. A non-negligible domain broadening was seen and attributed to a low nucleation rate using this type of electrode. However, under the appropriate poling conditions, this could be exploited to obtain a QPM grating with a short pitch (2 mu m), equal to half of the electrode period.
Place, publisher, year, edition, pages
2015. Vol. 23, no 2, 636-641 p.
Photolithography, Rubidium, Silicon, Complex structure, Contact poling, Conventional photolithography, Domain broadening, Domain engineering, Nucleation rate, Poling conditions, Silicon electrode
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-157684DOI: 10.1364/OE.23.000636ISI: 000349166100003ScopusID: 2-s2.0-84921748073OAI: oai:DiVA.org:kth-157684DiVA: diva2:771084
FunderSwedish Research CouncilCarl Tryggers foundation
QC 20150312. Updated from accepted to published.2014-12-122014-12-122015-03-30Bibliographically approved