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The influence of gain nonlevearities on distortion in semiconductor lasers
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0003-3056-4678
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2004 (English)Conference paper (Refereed)
Abstract [en]

The modulation response and second harmonic distortion was analyzed for different gain models and compared with exact integral gain models. It was shown that if we modulate the laser around steady state with a signal, it would induce carrier and photon fluctuations. The second order distortion depended on the carrier and photon modulation response, the internal mixing process determined by the Hessian matrix creating a fictive injection signal and the carrier and photon modulation response at intermodulation frequency. It was found that the approximate model has a reasonable good agreement with an exact comprehensive gain model at all frequencies and pumping currents.

Place, publisher, year, edition, pages
2004. 171-178 p.
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 5582
Keyword [en]
Bandwidth, Computational methods, Distortion (waves), Gain control, Matrix algebra, Nonlinear optics, Optoelectronic devices, Photons, Internal mixing, Photon fluctuations, Pumping currents, Second harmonic distortion, Semiconductor lasers
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-157291DOI: 10.1117/12.583451ISI: 000224542200024ScopusID: 2-s2.0-16644393887OAI: diva2:771183
Advanced Optoelectronics and Lasers, 16 September 2003 through 20 September 2003, Alushta, Ukraine

QC 20141212

Available from: 2014-12-12 Created: 2014-12-08 Last updated: 2015-10-07Bibliographically approved

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Schatz, RichardKjebon, Olle
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ReferencesLink to record
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