Carrier capture and relaxation in modulation doped InAs quantum dots
2005 (English)Conference paper (Refereed)
Carrier dynamics in n and p-doped and undoped InAs/GaAs quantum dots were studied by time-resolved photoluminescence with selective excitation. Ultrafast carrier relaxation in doped dots is attributed to efficient carrier-carrier scattering.
Place, publisher, year, edition, pages
2005. 454-455 p.
, IQEC, International Quantum Electronics Conference Proceedings, Volume 2005
Carrier concentration, Photoluminescence, Semiconducting indium compounds, Ultrafast phenomena, Carrier carrier scattering, Time resolved photoluminescence, Ultrafast carrier relaxation, Semiconductor quantum dots
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-157101DOI: 10.1109/IQEC.2005.1560909ScopusID: 2-s2.0-33846539100ISBN: 078039240XISBN: 9780780392403OAI: oai:DiVA.org:kth-157101DiVA: diva2:771276
International Quantum Electronics Conference 2005; Tokyo; Japan
QC 201412122014-12-122014-12-052014-12-12Bibliographically approved