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Carrier capture and relaxation in modulation doped InAs quantum dots
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
KTH, School of Engineering Sciences (SCI), Physics.
2005 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Carrier dynamics in n and p-doped and undoped InAs/GaAs quantum dots were studied by time-resolved photoluminescence with selective excitation. Ultrafast carrier relaxation in doped dots is attributed to efficient carrier-carrier scattering.

Place, publisher, year, edition, pages
2005. 454-455 p.
Series
IQEC, International Quantum Electronics Conference Proceedings, Volume 2005
Keyword [en]
Carrier concentration, Photoluminescence, Semiconducting indium compounds, Ultrafast phenomena, Carrier carrier scattering, Time resolved photoluminescence, Ultrafast carrier relaxation, Semiconductor quantum dots
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-157101DOI: 10.1109/IQEC.2005.1560909Scopus ID: 2-s2.0-33846539100ISBN: 078039240X (print)ISBN: 9780780392403 (print)OAI: oai:DiVA.org:kth-157101DiVA: diva2:771276
Conference
International Quantum Electronics Conference 2005; Tokyo; Japan
Note

QC 20141212

Available from: 2014-12-12 Created: 2014-12-05 Last updated: 2014-12-12Bibliographically approved

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Marcinkevičius, Saulius

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