Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's
2004 (English)In: Annu Proc Reliab Phys Symp, 2004, 79-83 p.Conference paper (Refereed)
The soft gate-oxide breakdown event is observed to have negligible impact on the intrinsic parameters of even a narrow nFET. However, during subsequent wear-out of the breakdown path a significant impact of gate-to-channel breakdowns on nFET characteristics is found. It is also shown that i) the effect of voltage stress on gate oxide and ii) apparent electrical effects have to be corrected for to properly understand the intrinsic nature of the breakdown.
Place, publisher, year, edition, pages
2004. 79-83 p.
, Annual Proceedings - Reliability Physics (Symposium), ISSN 0099-9512
CMOS integrated circuits, Computer simulation, Electric resistance, Extrapolation, Leakage currents, Parameter estimation, Threshold voltage, Transconductance, Circuit simulations, Gate-oxides, Oxide wear-out, Voltage stress, MOSFET devices
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-157429ScopusID: 2-s2.0-3042654612OAI: oai:DiVA.org:kth-157429DiVA: diva2:771280
2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual, 25 April 2004 through 29 April 2004, Phoenix, AZ.
QC 201412122014-12-122014-12-092014-12-12Bibliographically approved