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Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's
IMEC, Belgium .
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2004 (English)In: Annu Proc Reliab Phys Symp, 2004, 79-83 p.Conference paper, Published paper (Refereed)
Abstract [en]

The soft gate-oxide breakdown event is observed to have negligible impact on the intrinsic parameters of even a narrow nFET. However, during subsequent wear-out of the breakdown path a significant impact of gate-to-channel breakdowns on nFET characteristics is found. It is also shown that i) the effect of voltage stress on gate oxide and ii) apparent electrical effects have to be corrected for to properly understand the intrinsic nature of the breakdown.

Place, publisher, year, edition, pages
2004. 79-83 p.
Series
Annual Proceedings - Reliability Physics (Symposium), ISSN 0099-9512
Keyword [en]
CMOS integrated circuits, Computer simulation, Electric resistance, Extrapolation, Leakage currents, Parameter estimation, Threshold voltage, Transconductance, Circuit simulations, Gate-oxides, Oxide wear-out, Voltage stress, MOSFET devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-157429Scopus ID: 2-s2.0-3042654612OAI: oai:DiVA.org:kth-157429DiVA: diva2:771280
Conference
2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual, 25 April 2004 through 29 April 2004, Phoenix, AZ.
Note

QC 20141212

Available from: 2014-12-12 Created: 2014-12-09 Last updated: 2014-12-12Bibliographically approved

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Mahmood, Salman
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