Optically pumped VECSEL operating at 1550 nm
2004 (English)In: Proceedings of SPIE - The International Society for Optical Engineering, 2004, 25-33 p.Conference paper (Refereed)
We present the design and characteristics of an optically pumped vertical external cavity surface emitting laser emitting near 1550 nm. The InP-based laser was grown by Metalorganic vapor-phase epitaxy including an InGaAsP gain element and an InP/InGaAsP mirror. The gain element comprises 20 strain compensated quantum wells on top of a distributed Bragg reflector. As an external mirror we used a concave spherical mirror, which also provides the outcoupling of light. Gain is achieved by optical pumping with a high power, 1250 nm fiber Raman laser focused on the gain chip. Essential for achieving high output power is to reduce the temperature of the gain material and this is accomplished by bonding an intra-cavity silicon heat spreader to the surface of the gain element. The maximum output power is 260 mW at multi transverse mode operation and 230 mW at single transverse mode operation with a near Gaussian beam profile (M2=1.22) at 240 K. At room temperature the output power was limited to 12 mW. The maximum output power greatly depends on the operating temperature and studies of pump induced thermal effects show that thermal lensing imposes limitations on the attainable power.
Place, publisher, year, edition, pages
2004. 25-33 p.
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 5364
External cavity, Heat spreader, High power laser, InGaAsP, Optical pumping, Semiconductor laser, Surface-emitting laser, VECSEL, Vertical cavity, Computer simulation, Laser mode locking, Metallorganic vapor phase epitaxy, Mirrors, Optically pumped lasers, Semiconductor lasers, Semiconductor quantum wells, Thermal effects, Thermal gradients, Vertical external surface emitting laser (VECSEL), Solid state lasers
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-157424DOI: 10.1117/12.526729ISI: 000222822200003ScopusID: 2-s2.0-3543070471OAI: oai:DiVA.org:kth-157424DiVA: diva2:771587
Vertical-Cavity Surface-Emitting lasers VIII, 28 January 2004 through 29 January 2004, San Jose, CA
QC 201412152014-12-152014-12-092015-10-06Bibliographically approved