Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Defects and diffusion in high purity silicon for detector applications
Show others and affiliations
2004 (English)In: Conference on Photo-Responsive Materials, Proceedings, Wiley-VCH Verlagsgesellschaft, 2004, no 9, 2250-2257 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancy-oxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2004. no 9, 2250-2257 p.
Series
Physica Status Solidi C: Conferences, ISSN 1610-1634 ; Volume 1, Issue 9
Keyword [en]
Annealing, Crystal defects, Degradation, Diffusion, Heat treatment, Ionizing radiation, Irradiation, Leakage currents, Oxygen, Radiation detectors, Radiation hardening, Conduction band edges, Float zone (FZ) silicon, Oxygenation, Silicon detectors, Silicon wafers
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-157184ISI: 000223821200003Scopus ID: 2-s2.0-4444262717ISBN: 3-527-40552-6 (print)OAI: oai:DiVA.org:kth-157184DiVA: diva2:771688
Conference
Conference on Photo-Responsive Materials, February 25-29, 2004, Kariega Game Reserve, South Africa
Note

QC 20141215

Available from: 2014-12-15 Created: 2014-12-08 Last updated: 2017-05-19Bibliographically approved

Open Access in DiVA

No full text

Scopus

Authority records BETA

Hallén, Anders

Search in DiVA

By author/editor
Hallén, Anders
By organisation
Microelectronics and Information Technology, IMIT
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

isbn
urn-nbn

Altmetric score

isbn
urn-nbn
Total: 11 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf