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Defects and diffusion in high purity silicon for detector applications
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2004 (English)In: Conference on Photo-Responsive Materials, Proceedings, Wiley-VCH Verlagsgesellschaft, 2004, no 9, 2250-2257 p.Conference paper (Refereed)
Abstract [en]

In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancy-oxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2004. no 9, 2250-2257 p.
, Physica Status Solidi C: Conferences, ISSN 1610-1634 ; Volume 1, Issue 9
Keyword [en]
Annealing, Crystal defects, Degradation, Diffusion, Heat treatment, Ionizing radiation, Irradiation, Leakage currents, Oxygen, Radiation detectors, Radiation hardening, Conduction band edges, Float zone (FZ) silicon, Oxygenation, Silicon detectors, Silicon wafers
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-157184DOI: 10.1002/pscc.200404847ISI: 000223821200003ScopusID: 2-s2.0-4444262717ISBN: 3-527-40552-6OAI: diva2:771688
Conference on Photo-Responsive Materials, February 25-29, 2004, Kariega Game Reserve, South Africa

QC 20141215

Available from: 2014-12-15 Created: 2014-12-08 Last updated: 2014-12-15Bibliographically approved

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Hallén, Anders
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Microelectronics and Information Technology, IMIT
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