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Alternative Approaches in Growth of Polycrystalline InP on Si
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-8545-6546
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
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2014 (English)In: 26th International Conference on Indium Phosphide and Related Materials (IPRM), IEEE , 2014, 6880571- p.Conference paper, Published paper (Refereed)
Abstract [en]

III-V semiconductors are suitable for high efficiency and radiation resistant solar cells. However, the high cost of these materials limited the application of these solar cells only for specialty application. High quality polycrystalline III-V thin films on low cost substrate are the viable solutions for the problem. In this work we demonstrate two new approaches to grow polycrystalline InP on Si(001) substrate. (i) A simple chemical solution route which makes use of deposition of In2O3 on Si and its subsequent phosphidisation and (ii) In assisted growth that involves deposition of In metal on Si and subsequent growth of InP from its precursors in hydride vapor phase epitaxy. Both techniques are generic and can be applied to other semiconductors on low cost and flexible substrates.

Place, publisher, year, edition, pages
IEEE , 2014. 6880571- p.
Series
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
Keyword [en]
Deposition, Indium, Indium phosphide, Solar cells, Substrates, Chemical solution route, Flexible substrate, Hydride vapor phase epitaxy, II-IV semiconductors, Polycrystalline, Radiation resistant, Si (001) substrate, Viable solutions
National Category
Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:kth:diva-158463DOI: 10.1109/ICIPRM.2014.6880571ISI: 000346124000058Scopus ID: 2-s2.0-84906766054ISBN: 978-1-4799-5729-3 (print)OAI: oai:DiVA.org:kth-158463DiVA: diva2:776909
Conference
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Montpellier, France, 11 May 2014 through 15 May 2014
Note

QC 20150108

Available from: 2015-01-08 Created: 2015-01-08 Last updated: 2015-01-08Bibliographically approved

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Sun, Yan-TingLourdudoss, Sebastian

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