Alternative Approaches in Growth of Polycrystalline InP on Si
2014 (English)In: 26th International Conference on Indium Phosphide and Related Materials (IPRM), IEEE , 2014, 6880571- p.Conference paper (Refereed)
III-V semiconductors are suitable for high efficiency and radiation resistant solar cells. However, the high cost of these materials limited the application of these solar cells only for specialty application. High quality polycrystalline III-V thin films on low cost substrate are the viable solutions for the problem. In this work we demonstrate two new approaches to grow polycrystalline InP on Si(001) substrate. (i) A simple chemical solution route which makes use of deposition of In2O3 on Si and its subsequent phosphidisation and (ii) In assisted growth that involves deposition of In metal on Si and subsequent growth of InP from its precursors in hydride vapor phase epitaxy. Both techniques are generic and can be applied to other semiconductors on low cost and flexible substrates.
Place, publisher, year, edition, pages
IEEE , 2014. 6880571- p.
, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
Deposition, Indium, Indium phosphide, Solar cells, Substrates, Chemical solution route, Flexible substrate, Hydride vapor phase epitaxy, II-IV semiconductors, Polycrystalline, Radiation resistant, Si (001) substrate, Viable solutions
Other Engineering and Technologies
IdentifiersURN: urn:nbn:se:kth:diva-158463DOI: 10.1109/ICIPRM.2014.6880571ISI: 000346124000058ScopusID: 2-s2.0-84906766054ISBN: 978-1-4799-5729-3OAI: oai:DiVA.org:kth-158463DiVA: diva2:776909
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Montpellier, France, 11 May 2014 through 15 May 2014
QC 201501082015-01-082015-01-082015-01-08Bibliographically approved