Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 21, 214111- p.Article in journal (Refereed) Published
The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl) yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 x 10(11) eV(-1) cm(-2) were achieved by oxygen annealing at high temperatures (550 degrees C-600 degrees C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.
Place, publisher, year, edition, pages
2014. Vol. 116, no 21, 214111- p.
Annealing, Atomic layer deposition, Charge coupled devices, Deposition, Germanium, Interfaces (materials), MOS devices, Oxygen, Yttrium, Yttrium alloys, Yttrium oxide, Ge substrates, High temperature, Interface quality, Interface trap density, Metal-oxide-semiconductor capacitors, Oxygen annealing, Post deposition annealing, Situ x-ray photoelectron spectroscopy
IdentifiersURN: urn:nbn:se:kth:diva-158435DOI: 10.1063/1.4903533ISI: 000346007400041ScopusID: 2-s2.0-84916613141OAI: oai:DiVA.org:kth-158435DiVA: diva2:777817
QC 201501092015-01-092015-01-082015-01-09Bibliographically approved