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Optical properties and carrier dynamics in m-plane InGaN quantum wells
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0002-4606-4865
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2014 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Scanning near-field and time-resolved photoluminescence spectroscopy have been applied to characterize single m-plane InGaN QW structures. The PL spectra were found to be formed by emission from the extended and the localized states. Lateral dimensions of uniform potential regions were placed around a few tens of nm. It was shown that optimization of the template for the QW growth results in a more uniform emission spectrum and a reduced effect of carrier localization. The radiative recombination time at low temperatures was found to be short, about 0.5 ns. At room temperature, nonradiative recombination via efficient recombination centres was prevailing. Complexes of Ga vacancies with O were suggested to play this role.

Place, publisher, year, edition, pages
2014. Vol. 11, no 3-4, 690-693 p.
Series
Physica Status Solidi (C) Current Topics in Solid State Physics, ISSN 1862-6351 ; Volume 11, Issue 3-4
Keyword [en]
nonpolar InGaN, near-field, time-resolved, carrier dynamics
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-158706DOI: 10.1002/pssc.201300430ISI: 000346071300079Scopus ID: 2-s2.0-84898538556OAI: oai:DiVA.org:kth-158706DiVA: diva2:778881
Conference
10th International Conference on Nitride Semiconductors (ICNS), AUG 25-30, 2013, Washington, DC, USA
Note

QC 20150112

Available from: 2015-01-12 Created: 2015-01-12 Last updated: 2017-03-29Bibliographically approved

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Marcinkevicius, Saulius

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