Embedded Graphene Photodetectors for Silicon Photonics
2014 (English)Conference paper (Refereed)
Graphene has extraordinary electronic and optoelectronic properties such as high carrier mobility, large charge-carrier concentrations, tunability via electrostatic doping, wavelength-independent absorption, and relatively low dissipation rates . The combination of its electro-optical properties with its manufacturability and CMOS integrability makes graphene an extremely promising candidate for active photonic devices [2,3]. Because of its two-dimensional appearance, graphene has a limited light absorption, which is not enough to fulfill the requirements of silicon photonics technology. Recently, the integration of graphene with silicon waveguides [4,5] has been shown for on-chip applications . In these solutions graphene is placed on top and outside of the waveguide yielding only limited light-graphene interaction. We introduce novel photo-detector architecture by embedding CVD-graphene inside the slot layer of deposited high-k slot waveguides that are compatible with back-end-of-the-line manufacturing of photonic integrated circuits (PICs). This approach leads to a high light-graphene interaction due to the high mode concentration in the slot region. This results in enhanced absorption and enables a very compact photodetector design.
Place, publisher, year, edition, pages
2014. 43-44 p.
, IEEE Device Research Conference Proceedings, ISSN 15483770
Light absorption, Photodetectors, Photonic devices, Photonics, Photons, Waveguides
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-159048DOI: 10.1109/DRC.2014.6872291ISI: 000346309800019ScopusID: 2-s2.0-84906568999ISBN: 978-147995405-6OAI: oai:DiVA.org:kth-159048DiVA: diva2:782991
72nd Annual Device Research Conference (DRC), JUN 22-25, 2014, Santa Barbara, CA, USA
QC 201501232015-01-232015-01-202015-01-23Bibliographically approved