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High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-4606-4865
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 24, 241108- p.Article in journal (Refereed) Published
Abstract [en]

Scanning near-field photoluminescence (PL) spectroscopy was applied to study spatial variations of emission spectra of AlxGa1-xN epilayers with 0.6 <= x <= 0.7. PL spectra were found to be spatially uniform with peak wavelength standard deviations of only similar to 2 meV and ratios between peak intensity standard deviations and average peak intensity values of 0.06. The observed absence of correlation between the PL peak wavelength and intensity shows that spatial distribution of nonradiative recombination centers is not related to band potential fluctuations. Our results demonstrate that the homogeneous broadening and the random cation distribution primarily determine PL line-widths for layers grown under optimized conditions.

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2014. Vol. 105, no 24, 241108- p.
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URN: urn:nbn:se:kth:diva-159119DOI: 10.1063/1.4904710ISI: 000346643600008Scopus ID: 2-s2.0-84919341379OAI: oai:DiVA.org:kth-159119DiVA: diva2:783852
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Swedish Energy Agency, 36652-1
Note

QC 20150127

Available from: 2015-01-27 Created: 2015-01-22 Last updated: 2017-12-05Bibliographically approved

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Marcinkevicius, Saulius

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