Switching Performance of Parallel-Connected Power Modules with SiC MOSFETs
2014 (English)In: 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, IEEE conference proceedings, 2014, 3712-3717 p.Conference paper (Refereed)
Parallel connection of silicon carbide power modules is a possible solution in order to reach higher current ratings. Nevertheless, it must be done appropriately to ensure a feasible operation of the parallel-connected power modules. High switching speeds are desired in order to achieve high efficiencies in medium and high-power applications but parasitic elements may give rise to a non-uniform current sharing during turn-on and turn-off, leading to non-uniformly distributed switching losses. This paper presents the switching performance of parallel-connected power modules populated with several silicon carbide metal-oxide-semiconductor field-effect-transistors chips. It is experimentally shown that turn-on and turn-off switching times of approximately 50 ns and 100 ns, respectively, can be reached, while an acceptably uniform transient current sharing is obtained. Moreover, based on the obtained results, an efficiency of approximately 99.35% for a three-phase converter rated at 312 kVA with a switching frequency of 20 kHz can be estimated.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2014. 3712-3717 p.
, International Conference on Power Electronics, ISSN 2150-6078
Silicone Carbide, Gate Driver, Metal-Oxide-Semiconductor Field-Effect-Transistors, Power Module
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-159409DOI: 10.1109/IPEC.2014.6870032ISI: 000347109203099ScopusID: 2-s2.0-84906691270ISBN: 978-1-4799-2705-0OAI: oai:DiVA.org:kth-159409DiVA: diva2:784402
7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, Hiroshima, Japan, 18 May 2014 through 21 May 2014
QC 201501292015-01-292015-01-292016-09-16Bibliographically approved