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Switching Performance of Parallel-Connected Power Modules with SiC MOSFETs
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-6184-6470
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0002-1755-1365
2014 (English)In: 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, IEEE conference proceedings, 2014, 3712-3717 p.Conference paper, Published paper (Refereed)
Abstract [en]

Parallel connection of silicon carbide power modules is a possible solution in order to reach higher current ratings. Nevertheless, it must be done appropriately to ensure a feasible operation of the parallel-connected power modules. High switching speeds are desired in order to achieve high efficiencies in medium and high-power applications but parasitic elements may give rise to a non-uniform current sharing during turn-on and turn-off, leading to non-uniformly distributed switching losses. This paper presents the switching performance of parallel-connected power modules populated with several silicon carbide metal-oxide-semiconductor field-effect-transistors chips. It is experimentally shown that turn-on and turn-off switching times of approximately 50 ns and 100 ns, respectively, can be reached, while an acceptably uniform transient current sharing is obtained. Moreover, based on the obtained results, an efficiency of approximately 99.35% for a three-phase converter rated at 312 kVA with a switching frequency of 20 kHz can be estimated.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2014. 3712-3717 p.
Series
International Conference on Power Electronics, ISSN 2150-6078
Keyword [en]
Silicone Carbide, Gate Driver, Metal-Oxide-Semiconductor Field-Effect-Transistors, Power Module
National Category
Energy Engineering
Research subject
SRA - Energy
Identifiers
URN: urn:nbn:se:kth:diva-159409DOI: 10.1109/IPEC.2014.6870032ISI: 000347109203099Scopus ID: 2-s2.0-84906691270ISBN: 978-1-4799-2705-0 (print)OAI: oai:DiVA.org:kth-159409DiVA: diva2:784402
Conference
7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, Hiroshima, Japan, 18 May 2014 through 21 May 2014
Funder
StandUp
Note

QC 20150129

Available from: 2015-01-29 Created: 2015-01-29 Last updated: 2016-09-16Bibliographically approved
In thesis
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Open this publication in new window or tab >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2016. 101 p.
Series
TRITA-EE, ISSN 1653-5146 ; 2016:145
Keyword
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Public defence
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (English)
Opponent
Supervisors
Note

QC 20160922

Available from: 2016-09-22 Created: 2016-09-16 Last updated: 2016-09-22Bibliographically approved

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Colmenares, JuanNee, Hans-Peter

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