Rf-magnetron sputtered ferroelectric (Na,K)NbO3 films
2002 (English)In: Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics / [ed] White, G.; Tsurumi, T., 2002, 195-198 p.Conference paper (Refereed)
Sodium potassium niobate (Na,K)NbO3 (NKN) thin films were grown by rf-magnetron sputtering from stoichiometric Na0.5K0.5NbO3 target on LaAlO3 (LAO) single crystals and polycrystalline Pt80Ir20 (PtIr) substrates. NKN films on polycrystalline PtIr substrates were found to be preferentially (004 oriented while XRD measurements reveal epitaxial quality of NKN/LaAlO3 film structures. The ferroelectric state in NKN/PtIr films at room temperature is indicated by polarization loops with polarization as high as 33.4 muC/cm(2) at 700 kV/crn, remnant polarization of 9.9 muC/cm(2), and coercive field of 91 kV/cm. I-V characteristics of vertical Au/NKN/PtIr capacitive cells and planar Au/NKN/LAO interdigital capacitors (IDCs) showed very good insulating properties. For NKN IDC the leakage current density was in the order of 30 nA/cm(2) at 400 kV/cm. Rf dielectric spectroscopy demonstrates low loss, low frequency dispersion, and high voltage tunability both for vertical Au/NKN/PtIr and planar interdigital Au/NKN/LAO capacitors.
Place, publisher, year, edition, pages
2002. 195-198 p.
Capacitors, Coercive force, Crystal orientation, Epitaxial growth, Insulation, Magnetron sputtering, Polycrystalline materials, Stoichiometry, Remnant polarization
Other Materials Engineering
IdentifiersURN: urn:nbn:se:kth:diva-5097DOI: 10.1109/ISAF.2002.1195903ISI: 000183375500048ISBN: 0-7803-7414-2OAI: oai:DiVA.org:kth-5097DiVA: diva2:7859
QC 201009282005-05-122005-05-122010-09-28Bibliographically approved