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Enhanced device designs for Si-based infrared detectors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-7510-9639
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118Article in journal (Other academic) Submitted
Place, publisher, year, edition, pages
2015.
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-159760OAI: oai:DiVA.org:kth-159760DiVA: diva2:787347
Note

QS 2015

Available from: 2015-02-10 Created: 2015-02-10 Last updated: 2017-12-04Bibliographically approved
In thesis
1. Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications
Open this publication in new window or tab >>Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications
2015 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis presents SiGe(C)/Si(C) multi quantum well (MQW) layers individually or in combination with Si(C) Schottky diodes as material structures to detect infrared (IR) radiation. The performance of devices was investigated in terms of SiGe/Si periodicity and quality of SiGe/Si interface. The structures were grown by chemical vapour deposition using GeH4 and SiH4 sources at 650 °C and processed into pixel arrays with sizes of 25×25, 100×100 and 200×200 μm2. The device response to thermal variations was expressed by temperature coefficient of resistance (TCR) and the signal-to-noise-ratio was evaluated by noise measurements. The strain relaxation in SiGe layers was investigated by implementing oxygen at the interface of SiGe/Si or during SiGe growth. A minor amount of 10 ppb oxygen at the interface can be detected by noise measurements while the material characterizations could reveal defects for significantly higher defect density. Oxygen and water contaminations should be accounted for in low temperature epitaxy (350-650 °C) of the layers. Furthermore, an empirical model was developed to describe the kinetics of the SiGe growth using Si2H6 and Ge2H6 as precursors at low temperature. The model takes into account the energy for dissociation of gas molecules, diffusion of the molecules from the gas boundaries toward the substrate and the incorporation of absorbed molecules. A good consistency was observed between the experimental and calculated data.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. xv, 48 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2015:01
National Category
Nano Technology
Identifiers
urn:nbn:se:kth:diva-159762 (URN)978-91-7595-422-6 (ISBN)
Presentation
2015-02-12, Sal/Hall A, KTH- Electrum, Kista, Stockholm, 10:00 (English)
Opponent
Supervisors
Note

QC 20150211

Available from: 2015-02-11 Created: 2015-02-10 Last updated: 2015-02-11Bibliographically approved

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Salemi, Arash

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