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Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
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2015 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 49, no 1, 13-18 p.Article in journal (Refereed) Published
Abstract [en]

The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor-doped silicon regions.

Place, publisher, year, edition, pages
2015. Vol. 49, no 1, 13-18 p.
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Condensed Matter Physics
URN: urn:nbn:se:kth:diva-160406DOI: 10.1134/S1063782615010273ISI: 000347698500004ScopusID: 2-s2.0-84920586472OAI: diva2:790369

QC 20150224

Available from: 2015-02-24 Created: 2015-02-19 Last updated: 2015-02-24Bibliographically approved

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Radamson, Henry H.
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Integrated Devices and Circuits
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