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Auger recombination in In(Ga)Sb/InAs quantum dots
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 1, 013103- p.Article in journal (Refereed) Published
Abstract [en]

We report on the epitaxial formation of type II In0.5Ga0.5Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170-200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 x 10(-28) cm(6)/s for In0.5Ga0.5Sb/InAs quantum dots and 1.47 x 10(-27) cm(6)/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.

Place, publisher, year, edition, pages
2015. Vol. 106, no 1, 013103- p.
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URN: urn:nbn:se:kth:diva-160391DOI: 10.1063/1.4905455ISI: 000347976900047ScopusID: 2-s2.0-84923814861OAI: diva2:790870
VINNOVASwedish Foundation for Strategic Research

QC 20150226

Available from: 2015-02-26 Created: 2015-02-19 Last updated: 2015-02-26Bibliographically approved

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Zabel, ThomasReuterskiöld Hedlund, CarlBerggren, JesperErnerheim Jokumsen, ChristopherSoldemo, MarkusWeissenrieder, JonasGotelid, MatsHammar, Mattias
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Integrated Devices and CircuitsSchool of Information and Communication Technology (ICT)Material Physics, MF
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