Fabrication of relaxed germanium on insulator via room temperature wafer bonding
2014 (English)In: ECS Transactions: Volume 64, Cancun, Mexico, October 5 – 9, 2014 2014 ECS and SMEQ Joint International Meeting, Electrochemical Society, 2014, no 6, 533-541 p.Conference paper (Refereed)
We report on the fabrication of, high quality, monocrystalline relaxed Germanium with ultra-low roughness on insulator (GeOI) using low-temperature direct wafer bonding. We observe that a two-step epitaxially grown germanium film fabricated on silicon by reduced pressure chemical vapor deposition can be directly bonded to a SiO2 layer using a thin Al2O3 as bonding mediator. After removing the donor substrate silicon the germanium layer exhibits a complete relaxation without degradation in crystalline quality and no stress in the film. . The results suggest that the fabricated high quality GeOI substrate is a suitable platform for high performance device applications.
Place, publisher, year, edition, pages
Electrochemical Society, 2014. no 6, 533-541 p.
, ECS Transactions, ISSN 1938-5862 ; 64
Bonding, Chemical bonds, Chemical vapor deposition, Fabrication, Germanium, Silicon, Silicon alloys, Silicon oxides, Silicon wafers, Temperature, Crystalline quality, Direct wafer bonding, Epitaxially grown, Germanium on insulators, High performance devices, Low temperatures, Reduced pressure chemical vapor deposition, Room temperature
IdentifiersURN: urn:nbn:se:kth:diva-160681DOI: 10.1149/06406.0533ecstScopusID: 2-s2.0-84921260797OAI: oai:DiVA.org:kth-160681DiVA: diva2:790993
6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico, 5 October 2014 through 9 October 2014
QC 201502262015-02-262015-02-262015-02-26Bibliographically approved