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INFLUENCE OF H-2 ADDITION AND GROWTH TEMPERATURE ON CVD OF SIC USING HEXAMETHYLDISILANE AND AR
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1995 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 142, no 2, 565-571 p.Article in journal (Refereed) Published
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1995. Vol. 142, no 2, 565-571 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-161327DOI: 10.1149/1.2044099ISI: A1995QG02600042OAI: oai:DiVA.org:kth-161327DiVA: diva2:794416
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NR 20150402

Available from: 2015-03-11 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

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NORDELL, NJACOB, C

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