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Radiation silicon carbide detectors based on ion implantation of boron
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2014 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 61, no 4, 2105-2111 p., 6849512Article in journal (Refereed) Published
Abstract [en]

Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I-SMART (Innovative Sensor for Material Ageing and Radiation Testing), we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p+ - layer, and then implanted by boron ( 10 B) to realize the NCL. The second type was based on p+ - layer, and was implanted by 10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding.

Place, publisher, year, edition, pages
2014. Vol. 61, no 4, 2105-2111 p., 6849512
Keyword [en]
Diode, ion implantation, leakage current, pn junction, silicon carbide, space charge region, thermal neutrons
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-161532DOI: 10.1109/TNS.2014.2320943ISI: 000343929400022ScopusID: 2-s2.0-84906785122OAI: diva2:794676

QC 20150312

Available from: 2015-03-12 Created: 2015-03-12 Last updated: 2015-03-12Bibliographically approved

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Hallén, Anders
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Integrated Devices and Circuits
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