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Controlled growth of single crystal films of silicon carbide|includes susceptor to receive substrate, tube to lead gas over and past substrate and heater
1995 (English)Patent (Other (popular science, discussion, etc.))
Place, publisher, year, edition, pages
1995.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-161326ISI: 1996371457OAI: oai:DiVA.org:kth-161326DiVA: diva2:794690
Note

QS 201504

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-09Bibliographically approved

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Nordell, Nils

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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  • de-DE
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