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Controlled growth of single crystal films of silicon carbide|includes susceptor to receive substrate, tube to lead gas over and past substrate and heater
1995 (English)Patent (Other (popular science, discussion, etc.))
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Engineering and Technology
URN: urn:nbn:se:kth:diva-161326ISI: 1996371457OAI: diva2:794690

QS 201504

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-09Bibliographically approved

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Nordell, Nils
Engineering and Technology

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