Dependence of the aluminium ionization energy on doping concentration and compensation in 6H-SiC
1996 (English)In: Silicon Carbide and Related Materials1995, Institute of Physics Publishing (IOPP), 1996, 493-496 p.Conference paper (Refereed)
Hall-effect measurements on aluminium (Al)-doped p-type 6H-SiC were made and the dependence of the Al ionization energy on doping concentration and compensation was investigated. It is shown that the Al ionization energy is almost constant for a degree of compensation K much less than 0.01 up to an Al concentration of 5 . 10(20)cm(-3). An average value for the Al ionization energy is found to be 241.6 +/- 5.2 meV. Additionally, we find that the Al ionization energy for a degree of compensation in a range of 0.01 to 0.5 varies with doping concentration and compensation. An impurity band model describing this dependence is discussed.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 1996. 493-496 p.
, Institute of Physics Conference Series (Print), ISSN 0951-3248 ; 142
IdentifiersURN: urn:nbn:se:kth:diva-161324ISI: A1996BF72L00120ISBN: 0-7503-0335-2OAI: oai:DiVA.org:kth-161324DiVA: diva2:794692
International Conference on Silicon Carbide and Related Materials 1995 (ICSCRM-95), SEP 18-21, 1995, Kyoto, Japan
QC 201503132015-03-122015-03-112015-03-13Bibliographically approved