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Dependence of the aluminium ionization energy on doping concentration and compensation in 6H-SiC
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1996 (English)In: Silicon Carbide and Related Materials1995, Institute of Physics Publishing (IOPP), 1996, 493-496 p.Conference paper, Published paper (Refereed)
Abstract [en]

Hall-effect measurements on aluminium (Al)-doped p-type 6H-SiC were made and the dependence of the Al ionization energy on doping concentration and compensation was investigated. It is shown that the Al ionization energy is almost constant for a degree of compensation K much less than 0.01 up to an Al concentration of 5 . 10(20)cm(-3). An average value for the Al ionization energy is found to be 241.6 +/- 5.2 meV. Additionally, we find that the Al ionization energy for a degree of compensation in a range of 0.01 to 0.5 varies with doping concentration and compensation. An impurity band model describing this dependence is discussed.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 1996. 493-496 p.
Series
Institute of Physics Conference Series (Print), ISSN 0951-3248 ; 142
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-161324ISI: A1996BF72L00120ISBN: 0-7503-0335-2 (print)OAI: oai:DiVA.org:kth-161324DiVA: diva2:794692
Conference
International Conference on Silicon Carbide and Related Materials 1995 (ICSCRM-95), SEP 18-21, 1995, Kyoto, Japan
Note

QC 20150313

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-03-13Bibliographically approved

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Nordell, Nils

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